Modeling the Variability of Au/Ti/h-BN/Au Memristive Devices

The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth different numerical techniques. We extract the reset voltage three methods, quantify its cycle-to-cycle variability, calculate charge flux that allows to minimize effects electric noise inherent stochasticity resistive switching, describe device time series analyses assess “memory” effect, employ a circuit breaker simulator understand formation rupture percolation paths produce switching. conclude Au/Ti/h-BN/Au presented here higher than previously observed Au/h-BN/Au devices, hence, they may be useful for data encryption.